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Highly Integrated MEMS Magnetic Sensor Based on GMI Effect of Amorphous Wire

School of Mechatronical Engineering, Beijing Institute of Technology, Beijing 100081, China
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Micromachines 2019, 10(4), 237; https://doi.org/10.3390/mi10040237
Received: 7 March 2019 / Revised: 1 April 2019 / Accepted: 4 April 2019 / Published: 8 April 2019
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Abstract

In this paper, a highly integrated amorphous wire Giant magneto-impedance (GMI) magnetic sensor using micro electron mechanical system (MEMS) technology is designed, which is equipped with a signal conditioning circuit and uses a data acquisition card to convert the output signal of the circuit into a digital signal. The structure and package of the sensor are introduced. The sensor sensing principle and signal conditioning circuit are analyzed. The output of the sensor is tested, calibrated, and the relationship between the GMI effect of the amorphous wire and the excitation current frequency is explored. The sensor supplies voltage is ±5 V, and the excitation signal is a square wave signal with a frequency of 60 MHz and an amplitude of 1.2 V generated by the quartz crystal. The sensor has the largest GMI effect at 60 MHz with a sensitivity of 4.8 V/Oe and a resolution of 40 nT. View Full-Text
Keywords: MEMS; amorphous wire; GMI magnetic sensor; high integrated MEMS; amorphous wire; GMI magnetic sensor; high integrated
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Chen, J.; Li, J.; Xu, L. Highly Integrated MEMS Magnetic Sensor Based on GMI Effect of Amorphous Wire. Micromachines 2019, 10, 237.

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