Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide
Abstract
:1. Introduction
2. Molecular Dynamics Modelling
2.1. Methodology
2.2. MD Modelling Results
3. Experimental Validation
4. Conclusions
Author Contributions
Funding
Conflicts of Interest
References
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Parameter | Value |
---|---|
Length of workpiece | 300 nm |
Thickness | 3.5 nm |
t | 120 nm |
Undeformed chip thickness | 15, 20, 25, 30, 40, 50 nm |
Atoms in workpiece | 11.8, 13.0, 14.2, 14.9, 17.9, 18.7 million |
Total atoms in Tool | 0.28 million |
Tool rake angle | −30° |
Tool clearance angle | 10° |
Cutting edge radius | 30 nm |
Cutting speed | 0 m/s |
Parameter | Value |
---|---|
Tool rake angle | −30° |
Clearance angle | 10° |
Tool nose radius | 1.507 mm |
Cutting speed | 3 mm/s |
Tilt angle | 0.01° |
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Zhao, W.; Hong, H.; Wang, H. Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide. Micromachines 2019, 10, 696. https://doi.org/10.3390/mi10100696
Zhao W, Hong H, Wang H. Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide. Micromachines. 2019; 10(10):696. https://doi.org/10.3390/mi10100696
Chicago/Turabian StyleZhao, Wei, Haibo Hong, and Hongzhi Wang. 2019. "Mechanism of Unstable Material Removal Modes in Micro Cutting of Silicon Carbide" Micromachines 10, no. 10: 696. https://doi.org/10.3390/mi10100696