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Open AccessArticle

Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors

1
Department of Electrical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822, USA
2
Space and Naval Warfare Systems Center Pacific, Pearl City, HI 96782, USA
*
Author to whom correspondence should be addressed.
Micromachines 2019, 10(1), 54; https://doi.org/10.3390/mi10010054
Received: 1 December 2018 / Revised: 23 December 2018 / Accepted: 8 January 2019 / Published: 14 January 2019
(This article belongs to the Special Issue Carbon Based Electronic Devices)
Advancements in flexible circuit interconnects are critical for widespread adoption of flexible electronics. Non-toxic liquid-metals offer a viable solution for flexible electrodes due to deformability and low bulk resistivity. However, fabrication processes utilizing liquid-metals suffer from high complexity, low throughput, and significant production cost. Our team utilized an inexpensive spray-on stencil technique to deposit liquid-metal Galinstan electrodes in top-gated graphene field-effect transistors (GFETs). The electrode stencils were patterned using an automated vinyl cutter and positioned directly onto chemical vapor deposition (CVD) graphene transferred to polyethylene terephthalate (PET) substrates. Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. The fabricated transistors possess hole and electron mobilities of 663.5 cm2/(V·s) and 689.9 cm2/(V·s), respectively, and support a simple and effective method of developing high-yield flexible electronics. View Full-Text
Keywords: graphene; Galinstan; Liquid-Metal; spray-on; aerosol; honey; mobility; contact resistance; TLM; I-V characteristics graphene; Galinstan; Liquid-Metal; spray-on; aerosol; honey; mobility; contact resistance; TLM; I-V characteristics
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Melcher, J.L.; Elassy, K.S.; Ordonez, R.C.; Hayashi, C.; Ohta, A.T.; Garmire, D. Spray-On Liquid-Metal Electrodes for Graphene Field-Effect Transistors. Micromachines 2019, 10, 54.

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