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Sustainability
Volume 14
Issue 8
10.3390/su14084603
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Article

Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications

by
Tanzeela Fazal
1,*,
Bushra Ismail
2,*,
Mazloom Shah
1,
Shahid Iqbal
3,*,
Eslam B. Elkaeed
4,
Nasser S. Awwad
5 and
Hala A. Ibrahium
6,7
1
Department of Chemistry, Abbottabad University of Science and Technology (AUST), Abbottabad 22500, Pakistan
2
Department of Chemistry, COMSATS University Islamabad (CUI), Abbottabad 22060, Pakistan
3
Department of Chemistry, School of Natural Sciences (SNS), National University of Science and Technology (NUST), H-12, Islamabad 46000, Pakistan
4
Department of Pharmaceutical Sciences, College of Pharmacy, AlMaarefa University, Riyadh 13713, Saudi Arabia
5
Chemistry Department, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
6
Biology Department, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413, Saudi Arabia
7
Department of Semi Pilot Plant, Nuclear Materials Authority, El Maadi, P.O. Box 530, Cairo 11381, Egypt
*
Authors to whom correspondence should be addressed.
Sustainability 2022, 14(8), 4603; https://doi.org/10.3390/su14084603
Submission received: 20 February 2022 / Revised: 14 March 2022 / Accepted: 17 March 2022 / Published: 12 April 2022
(This article belongs to the Special Issue Sustainable Development of Energy Conversion and Storage Devices)
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Abstract

For photovoltaic applications, undoped and Ni2+ doped Bi2S3 thin films were chemically deposited onto glass substrates at room temperature. Elemental diffraction analysis confirmed the successful Ni2+ incorporation in the range of 1.0 to 2.0 at. %, while X-ray Diffraction analysis revealed that orthorhombic crystal lattice of Bi2S3 was conserved while transferring from binary to ternary phase. Scanning electron microscopy images reported homogeneous and crack-free morphology of the obtained films. Optoelectronic analysis revealed that the bandgap value was shifted from 1.7 to 1.1 eV. Ni2+ incorporation also improved the carrier concentration, leading to higher electrical conductivity. Resultant optoelectronic behavior of ternary Bi2−x NixS3 thin films suggests that doping is proved to be an effectual tool to optimize the photovoltaic response of Bi2S3 for solar cell applications.
Keywords: chemical bath deposition; optoelectronic properties; photovoltaic behaviour; semiconductors chemical bath deposition; optoelectronic properties; photovoltaic behaviour; semiconductors

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MDPI and ACS Style

Fazal, T.; Ismail, B.; Shah, M.; Iqbal, S.; Elkaeed, E.B.; Awwad, N.S.; Ibrahium, H.A. Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications. Sustainability 2022, 14, 4603. https://doi.org/10.3390/su14084603

AMA Style

Fazal T, Ismail B, Shah M, Iqbal S, Elkaeed EB, Awwad NS, Ibrahium HA. Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications. Sustainability. 2022; 14(8):4603. https://doi.org/10.3390/su14084603

Chicago/Turabian Style

Fazal, Tanzeela, Bushra Ismail, Mazloom Shah, Shahid Iqbal, Eslam B. Elkaeed, Nasser S. Awwad, and Hala A. Ibrahium. 2022. "Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications" Sustainability 14, no. 8: 4603. https://doi.org/10.3390/su14084603

APA Style

Fazal, T., Ismail, B., Shah, M., Iqbal, S., Elkaeed, E. B., Awwad, N. S., & Ibrahium, H. A. (2022). Simplified Route for Deposition of Binary and Ternary Bismuth Sulphide Thin Films for Solar Cell Applications. Sustainability, 14(8), 4603. https://doi.org/10.3390/su14084603

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