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Materials 2016, 9(4), 299;

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa, Campus de Caparica, Caparica 2829-516, Portugal
Authors to whom correspondence should be addressed.
Academic Editor: Dinesh Agrawal
Received: 27 February 2016 / Revised: 6 April 2016 / Accepted: 15 April 2016 / Published: 20 April 2016
(This article belongs to the Special Issue Microwave Materials Processing)
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The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C. View Full-Text
Keywords: ZnO nanostructures; spin-coating; hydrothermal synthesis; microwave; UV sensors ZnO nanostructures; spin-coating; hydrothermal synthesis; microwave; UV sensors

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Pimentel, A.; Ferreira, S.H.; Nunes, D.; Calmeiro, T.; Martins, R.; Fortunato, E. Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study. Materials 2016, 9, 299.

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