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Keywords = concave patterned sapphire substrate

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19 pages, 5781 KiB  
Article
A Novel Synthesis of ZnO Nanoflower Arrays Using a Lift-Off Technique with Different Thicknesses of Al Sacrificial Layers on a Patterned Sapphire Substrate
by Hsien-Wei Tseng, Ching-Shan Wang, Fang-Hsing Wang, Han-Wen Liu and Cheng-Fu Yang
Nanomaterials 2022, 12(4), 612; https://doi.org/10.3390/nano12040612 - 11 Feb 2022
Cited by 6 | Viewed by 2124
Abstract
A novel method to synthesize large-scale ZnO nanoflower arrays using a protrusion patterned ZnO seed layer was investigated. Different thicknesses of aluminum (Al) film were deposited on the concave patterned sapphire substrate as a sacrificial layer. ZnO gel was layered onto the Al [...] Read more.
A novel method to synthesize large-scale ZnO nanoflower arrays using a protrusion patterned ZnO seed layer was investigated. Different thicknesses of aluminum (Al) film were deposited on the concave patterned sapphire substrate as a sacrificial layer. ZnO gel was layered onto the Al film as a seed layer and OE-6370HF AB optical glue was used as the adhesive material. A lift-off technique was used to transfer the protrusion patterned ZnO/AB glue seed layer to a P-type Si <100> wafer. The hydrothermal method using Zn(CH3COO)2 and C6H12N4 solutions as liquid precursors was used to synthesize ZnO nanoflower arrays on the patterned seed layer. X-ray diffraction spectra, field-effect scanning electron microscopy, focused ion beam milling (for obtaining cross-sectional views), and photoluminescence (PL) spectrometry were used to analyze the effects that different synthesis times and different thicknesses of Al sacrificial layer had on the properties of ZnO nanoflower arrays. These effects included an increased diameter, and a decreased height, density (i.e., number of nanorods in μm−2), total surface area, total volume, and maximum emission intensity of PL spectrum. We showed that when the synthesis time and the thickness of the Al sacrificial layer were increased, the emission intensities of the ultraviolet light and visible light had different variations. Full article
(This article belongs to the Special Issue New Achievements in Nanostructured and Low Dimensional Materials and Systems)
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7 pages, 2029 KiB  
Article
Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
by YewChung Sermon Wu, A. Panimaya Selvi Isabel, Jian-Hsuan Zheng, Bo-Wen Lin, Jhen-Hong Li and Chia-Chen Lin
Materials 2015, 8(4), 1993-1999; https://doi.org/10.3390/ma8041993 - 22 Apr 2015
Cited by 5 | Viewed by 6568
Abstract
The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage [...] Read more.
The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency. Full article
(This article belongs to the Special Issue Luminescent Materials and Devices)
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