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Article

Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process

by
Ching-Lin Fan
1,2,*,
Ming-Chi Shang
1,
Bo-Jyun Li
1,
Yu-Zuo Lin
2,
Shea-Jue Wang
3,
Win-Der Lee
4 and
Bohr-Ran Hung
1
1
Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan
2
Department of Electronic Engineering, National Taiwan University of Science and Technology, 43 Section 4, Keelung Road, Taipei 106, Taiwan
3
Institute of Materials Science and Engineering, National Taipei University of Technology, Taipei 106, Taiwan
4
Department of Electrical Engineering, Lee-Ming Institute of Technology, New Taipei City 243, Taiwan
*
Author to whom correspondence should be addressed.
Materials 2015, 8(4), 1704-1713; https://doi.org/10.3390/ma8041704
Submission received: 7 January 2015 / Revised: 13 March 2015 / Accepted: 26 March 2015 / Published: 13 April 2015
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Abstract

This study proposes a two-photomask process for fabricating amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs) that exhibit a self-aligned structure. The fabricated TFTs, which lack etching-stop (ES) layers, have undamaged a-IGZO active layers that facilitate superior performance. In addition, we demonstrate a bilayer passivation method that uses a polytetrafluoroethylene (Teflon) and SiO2 combination layer for improving the electrical reliability of the fabricated TFTs. Teflon was deposited as a buffer layer through thermal evaporation. The Teflon layer exhibited favorable compatibility with the underlying IGZO channel layer and effectively protected the a-IGZO TFTs from plasma damage during SiO2 deposition, resulting in a negligible initial performance drop in the a-IGZO TFTs. Compared with passivation-free a-IGZO TFTs, passivated TFTs exhibited superior stability even after 168 h of aging under ambient air at 95% relative humidity.
Keywords: indium gallium zinc oxide (IGZO); thin film transistors (TFTs); passivation layer; Teflon; SiO2 indium gallium zinc oxide (IGZO); thin film transistors (TFTs); passivation layer; Teflon; SiO2

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MDPI and ACS Style

Fan, C.-L.; Shang, M.-C.; Li, B.-J.; Lin, Y.-Z.; Wang, S.-J.; Lee, W.-D.; Hung, B.-R. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials 2015, 8, 1704-1713. https://doi.org/10.3390/ma8041704

AMA Style

Fan C-L, Shang M-C, Li B-J, Lin Y-Z, Wang S-J, Lee W-D, Hung B-R. Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials. 2015; 8(4):1704-1713. https://doi.org/10.3390/ma8041704

Chicago/Turabian Style

Fan, Ching-Lin, Ming-Chi Shang, Bo-Jyun Li, Yu-Zuo Lin, Shea-Jue Wang, Win-Der Lee, and Bohr-Ran Hung. 2015. "Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process" Materials 8, no. 4: 1704-1713. https://doi.org/10.3390/ma8041704

APA Style

Fan, C.-L., Shang, M.-C., Li, B.-J., Lin, Y.-Z., Wang, S.-J., Lee, W.-D., & Hung, B.-R. (2015). Teflon/SiO2 Bilayer Passivation for Improving the Electrical Reliability of Oxide TFTs Fabricated Using a New Two-Photomask Self-Alignment Process. Materials, 8(4), 1704-1713. https://doi.org/10.3390/ma8041704

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