Lu, Q.; Mu, Y.; Roberts, J.W.; Althobaiti, M.; Dhanak, V.R.; Wu, J.; Zhao, C.; Zhao, C.Z.; Zhang, Q.; Yang, L.;
et al. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. Materials 2015, 8, 8169-8182.
https://doi.org/10.3390/ma8125454
AMA Style
Lu Q, Mu Y, Roberts JW, Althobaiti M, Dhanak VR, Wu J, Zhao C, Zhao CZ, Zhang Q, Yang L,
et al. Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. Materials. 2015; 8(12):8169-8182.
https://doi.org/10.3390/ma8125454
Chicago/Turabian Style
Lu, Qifeng, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang,
and et al. 2015. "Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates" Materials 8, no. 12: 8169-8182.
https://doi.org/10.3390/ma8125454
APA Style
Lu, Q., Mu, Y., Roberts, J. W., Althobaiti, M., Dhanak, V. R., Wu, J., Zhao, C., Zhao, C. Z., Zhang, Q., Yang, L., Mitrovic, I. Z., Taylor, S., & Chalker, P. R.
(2015). Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates. Materials, 8(12), 8169-8182.
https://doi.org/10.3390/ma8125454
