Mancuso, A.S.; De Luca, S.; Sangregorio, E.; Muoio, A.; Gallo, E.; Vanellone, S.; Quadrivi, E.; Trotta, A.; Calcagno, L.; Tudisco, S.;
et al. High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation. Materials 2026, 19, 699.
https://doi.org/10.3390/ma19040699
AMA Style
Mancuso AS, De Luca S, Sangregorio E, Muoio A, Gallo E, Vanellone S, Quadrivi E, Trotta A, Calcagno L, Tudisco S,
et al. High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation. Materials. 2026; 19(4):699.
https://doi.org/10.3390/ma19040699
Chicago/Turabian Style
Mancuso, Alfio Samuele, Saverio De Luca, Enrico Sangregorio, Annamaria Muoio, Erik Gallo, Silvia Vanellone, Eleonora Quadrivi, Antonio Trotta, Lucia Calcagno, Salvo Tudisco,
and et al. 2026. "High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation" Materials 19, no. 4: 699.
https://doi.org/10.3390/ma19040699
APA Style
Mancuso, A. S., De Luca, S., Sangregorio, E., Muoio, A., Gallo, E., Vanellone, S., Quadrivi, E., Trotta, A., Calcagno, L., Tudisco, S., & La Via, F.
(2026). High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature Operation. Materials, 19(4), 699.
https://doi.org/10.3390/ma19040699