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Journal: Materials, 2025
Volume: 18
Number: 1741

Article: Study of ZrO2 Gate Dielectric with Thin SiO2 Interfacial Layer in 4H-SiC Trench MOS Capacitors
Authors: by Qimin Huang, Yunduo Guo, Anfeng Wang, Zhaopeng Bai, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma and Qingchun Zhang
Link: https://www.mdpi.com/1996-1944/18/8/1741

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