Hwang, I.; Kim, J.; Lee, J.; Jung, Y.; Yoon, C.
Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation. Materials 2025, 18, 948.
https://doi.org/10.3390/ma18050948
AMA Style
Hwang I, Kim J, Lee J, Jung Y, Yoon C.
Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation. Materials. 2025; 18(5):948.
https://doi.org/10.3390/ma18050948
Chicago/Turabian Style
Hwang, Inkook, Jiwon Kim, Joungho Lee, Yeonwoong Jung, and Changbun Yoon.
2025. "Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation" Materials 18, no. 5: 948.
https://doi.org/10.3390/ma18050948
APA Style
Hwang, I., Kim, J., Lee, J., Jung, Y., & Yoon, C.
(2025). Memory Devices with HfO2 Charge-Trapping and TiO2 Channel Layers: Fabrication via Remote and Direct Plasma Atomic Layer Deposition and Comparative Performance Evaluation. Materials, 18(5), 948.
https://doi.org/10.3390/ma18050948
