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Journal: Materials, 2025
Volume: 18
Number: 3820
Article:
Filamentary Resistive Switching Mechanism in CuO Thin Film-Based Memristor
Authors:
by
Monika Ozga, Robert Mroczynski, Krzysztof Matus, Sebastian Arabasz and Bartłomiej S. Witkowski
Link:
https://www.mdpi.com/1996-1944/18/16/3820
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