Sun, Z.; Wang, P.; Li, X.; Chen, L.; Yang, Y.; Wang, C.
Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt. Materials 2024, 17, 1852.
https://doi.org/10.3390/ma17081852
AMA Style
Sun Z, Wang P, Li X, Chen L, Yang Y, Wang C.
Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt. Materials. 2024; 17(8):1852.
https://doi.org/10.3390/ma17081852
Chicago/Turabian Style
Sun, Zhendong, Pengfei Wang, Xuemei Li, Lijia Chen, Ying Yang, and Chunxia Wang.
2024. "Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt" Materials 17, no. 8: 1852.
https://doi.org/10.3390/ma17081852
APA Style
Sun, Z., Wang, P., Li, X., Chen, L., Yang, Y., & Wang, C.
(2024). Optimization of Bilayer Resistive Random Access Memory Based on Ti/HfO2/ZrO2/Pt. Materials, 17(8), 1852.
https://doi.org/10.3390/ma17081852