Article Versions Notes

Ali AMA, Ahmed NM, Kabir NA, AL-Diabat AM, Algadri NA, Alsadig A, Aldaghri OA, Ibnaouf KH. Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation. Materials. 2023; 16(5):1868. https://doi.org/10.3390/ma16051868

Ali, Amal Mohamed Ahmed, Naser M. Ahmed, Norlaili A. Kabir, Ahmad M. AL-Diabat, Natheer A. Algadri, Ahmed Alsadig, Osamah A. Aldaghri, and Khalid H. Ibnaouf. 2023. "Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation" Materials 16, no. 5: 1868. https://doi.org/10.3390/ma16051868

Ali, A. M. A., Ahmed, N. M., Kabir, N. A., AL-Diabat, A. M., Algadri, N. A., Alsadig, A., Aldaghri, O. A., & Ibnaouf, K. H. (2023). Sensitivity of Al-Doped Zinc-Oxide Extended Gate Field Effect Transistors to Low-Dose X-ray Radiation. Materials, 16(5), 1868. https://doi.org/10.3390/ma16051868