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Journal: Materials, 2023
Volume: 16
Number: 5638
Article:
Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Authors:
by
Emanuela Schilirò, Patrick Fiorenza, Raffaella Lo Nigro, Bruno Galizia, Giuseppe Greco, Salvatore Di Franco, Corrado Bongiorno, Francesco La Via, Filippo Giannazzo and Fabrizio Roccaforte
Link:
https://www.mdpi.com/1996-1944/16/16/5638
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