Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He+ and H2+ Ions

You, Guoqiang; Lin, Haipeng; Qu, Yanfeng; Hao, Jie; You, Suyuan; Li, Bingsheng

doi:10.3390/ma15082941

Open AccessArticle

Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions

by

Guoqiang You

^1,*,

Haipeng Lin

¹,

Yanfeng Qu

¹,

Jie Hao

¹,

Suyuan You

² and

Bingsheng Li

^3,*

¹

China Institute for Radiation Protection, Taiyuan 030006, China

²

School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000, China

³

State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China

^*

Authors to whom correspondence should be addressed.

Materials 2022, 15(8), 2941; https://doi.org/10.3390/ma15082941

Submission received: 15 March 2022 / Revised: 14 April 2022 / Accepted: 15 April 2022 / Published: 18 April 2022

(This article belongs to the Special Issue Experiment and Calculation Simulation to Study Hydrogen-Helium Effect Mechanism in Materials)

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Abstract

Silicon carbide (SiC) is a promising material used in the advanced semiconductor industry. Fabricating SiC-on-insulator via H implantation is a good method. He and H co-implantation into Si can efficiently enhance exfoliation efficiency compared to only H implantation. In this study, 6H-SiC single crystals were implanted with He⁺ and H₂⁺ dual beams at room temperature, followed by annealing at 1100 °C for 15 min, and irradiations with 60 keV He ions with a fluence of 1.5 × 10¹⁶ ions/cm⁻² or 5.0 × 10¹⁶ ions/cm⁻² and 100 keV H₂⁺ ions with a fluence of 5 × 10¹⁶ ions/cm⁻² were carried out. The lattice disorder was characterized by both Raman spectroscopy and transmission electron microscopy. The intensity of Raman peaks decreased with increasing fluence. No Raman shift or new phases were found. A very high numerical density of bubbles was observed as compared to single H or He implantation. Moreover, stacking faults, Frank loops and tangled dislocations were formed in the damaged layer. Surface exfoliation was inhibited by co-implantation. A possible reason for this is an increase in fracture toughness and a decrease in elastic out-of-plane strain due to dense bubbles and stacking faults.

Keywords: silicon carbide; H₂⁺ implantation; He⁺ implantation; bubbles; microstructure

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MDPI and ACS Style

You, G.; Lin, H.; Qu, Y.; Hao, J.; You, S.; Li, B. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions. Materials 2022, 15, 2941. https://doi.org/10.3390/ma15082941

AMA Style

You G, Lin H, Qu Y, Hao J, You S, Li B. Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions. Materials. 2022; 15(8):2941. https://doi.org/10.3390/ma15082941

Chicago/Turabian Style

You, Guoqiang, Haipeng Lin, Yanfeng Qu, Jie Hao, Suyuan You, and Bingsheng Li. 2022. "Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions" Materials 15, no. 8: 2941. https://doi.org/10.3390/ma15082941

APA Style

You, G., Lin, H., Qu, Y., Hao, J., You, S., & Li, B. (2022). Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions. Materials, 15(8), 2941. https://doi.org/10.3390/ma15082941

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Investigation of Exfoliation Efficiency of 6H-SiC Implanted Sequentially with He⁺ and H₂⁺ Ions

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