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Journal: Materials, 2022
Volume: 15
Number: 2251
Article:
Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory Applications
Authors:
by
Yoseop Lee, Sungmun Song, Woori Ham and Seung-Eon Ahn
Link:
https://www.mdpi.com/1996-1944/15/6/2251
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