Balagula, R.M.; Subačius, L.; Jorudas, J.; Janonis, V.; Prystawko, P.; Grabowski, M.; Kašalynas, I.
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials 2022, 15, 2066.
https://doi.org/10.3390/ma15062066
AMA Style
Balagula RM, Subačius L, Jorudas J, Janonis V, Prystawko P, Grabowski M, Kašalynas I.
High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials. 2022; 15(6):2066.
https://doi.org/10.3390/ma15062066
Chicago/Turabian Style
Balagula, Roman M., Liudvikas Subačius, Justinas Jorudas, Vytautas Janonis, Pawel Prystawko, Mikolaj Grabowski, and Irmantas Kašalynas.
2022. "High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate" Materials 15, no. 6: 2066.
https://doi.org/10.3390/ma15062066
APA Style
Balagula, R. M., Subačius, L., Jorudas, J., Janonis, V., Prystawko, P., Grabowski, M., & Kašalynas, I.
(2022). High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate. Materials, 15(6), 2066.
https://doi.org/10.3390/ma15062066
