Sung, D.; Wen, L.; Tak, H.; Lee, H.; Kim, D.; Yeom, G.
Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma. Materials 2022, 15, 1300.
https://doi.org/10.3390/ma15041300
AMA Style
Sung D, Wen L, Tak H, Lee H, Kim D, Yeom G.
Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma. Materials. 2022; 15(4):1300.
https://doi.org/10.3390/ma15041300
Chicago/Turabian Style
Sung, Dain, Long Wen, Hyunwoo Tak, Hyejoo Lee, Dongwoo Kim, and Geunyoung Yeom.
2022. "Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma" Materials 15, no. 4: 1300.
https://doi.org/10.3390/ma15041300
APA Style
Sung, D., Wen, L., Tak, H., Lee, H., Kim, D., & Yeom, G.
(2022). Investigation of SiO2 Etch Characteristics by C6F6/Ar/O2 Plasmas Generated Using Inductively Coupled Plasma and Capacitively Coupled Plasma. Materials, 15(4), 1300.
https://doi.org/10.3390/ma15041300