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Volume 15
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10.3390/ma15031071
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Article

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer

by
Paweł Wyborski
1,*,
Paweł Podemski
1,
Piotr Andrzej Wroński
2,
Fauzia Jabeen
2,3,
Sven Höfling
2 and
Grzegorz Sęk
1
1
Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
2
Technische Physik, Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, University of Würzburg, Am Hubland, D-97074 Würzburg, Germany
3
Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
*
Author to whom correspondence should be addressed.
Materials 2022, 15(3), 1071; https://doi.org/10.3390/ma15031071
Submission received: 20 November 2021 / Revised: 22 January 2022 / Accepted: 26 January 2022 / Published: 29 January 2022
(This article belongs to the Special Issue Optical Properties and Application Prospects of Novel Epitaxial Nanostructures)
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Abstract

We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with gradual composition ensuring a redshift of the QD emission up to the second telecom window. Based on the photoluminescence (PL) measurements and numerical calculations, we analyzed the factors influencing the energies of optical transitions in QDs, among which the QD height seems to be dominating. In addition, polarization anisotropy of the QD emission was observed, which is a fingerprint of significant valence states mixing enhanced by the QD confinement potential asymmetry, driven by the decreased strain with increasing In content in the MBL. The barrier-related transitions were probed by photoreflectance, which combined with photoluminescence data and the PL temperature dependence, allowed for the determination of the carrier activation energies and the main channels of carrier loss, identified as the carrier escape to the MBL barrier. Eventually, the zero-dimensional character of the emission was confirmed by detecting the photoluminescence from single QDs with identified features of the confined neutral exciton and biexciton complexes via the excitation power and polarization dependences.
Keywords: molecular beam epitaxy; quantum dot; metamorphic buffer layer; band structure; photoluminescence; photoreflectance molecular beam epitaxy; quantum dot; metamorphic buffer layer; band structure; photoluminescence; photoreflectance

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MDPI and ACS Style

Wyborski, P.; Podemski, P.; Wroński, P.A.; Jabeen, F.; Höfling, S.; Sęk, G. Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer. Materials 2022, 15, 1071. https://doi.org/10.3390/ma15031071

AMA Style

Wyborski P, Podemski P, Wroński PA, Jabeen F, Höfling S, Sęk G. Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer. Materials. 2022; 15(3):1071. https://doi.org/10.3390/ma15031071

Chicago/Turabian Style

Wyborski, Paweł, Paweł Podemski, Piotr Andrzej Wroński, Fauzia Jabeen, Sven Höfling, and Grzegorz Sęk. 2022. "Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer" Materials 15, no. 3: 1071. https://doi.org/10.3390/ma15031071

APA Style

Wyborski, P., Podemski, P., Wroński, P. A., Jabeen, F., Höfling, S., & Sęk, G. (2022). Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer. Materials, 15(3), 1071. https://doi.org/10.3390/ma15031071

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