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Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example
 
 

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Journal: Materials, 2022
Volume: 15
Number: 598

Article: Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions
Authors: by Yuan Zou, Jue Wang, Hongyi Xu and Hengyu Wang
Link: https://www.mdpi.com/1996-1944/15/2/598

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