Article Versions Notes

Zhang M, Lin F, Wang W, Wen F, Chen G, He S, Wang Y, Fan S, Bu R, Wang H. HfAlO_x/Al₂O₃ Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond. Materials. 2022; 15(2):446. https://doi.org/10.3390/ma15020446

Zhang, Minghui, Fang Lin, Wei Wang, Feng Wen, Genqiang Chen, Shi He, Yanfeng Wang, Shuwei Fan, Renan Bu, and Hongxing Wang. 2022. "HfAlO_x/Al₂O₃ Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond" Materials 15, no. 2: 446. https://doi.org/10.3390/ma15020446

Zhang, M., Lin, F., Wang, W., Wen, F., Chen, G., He, S., Wang, Y., Fan, S., Bu, R., & Wang, H. (2022). HfAlO_x/Al₂O₃ Bilayer Dielectrics for a Field Effect Transistor on a Hydrogen-Terminated Diamond. Materials, 15(2), 446. https://doi.org/10.3390/ma15020446