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Journal: Materials, 2022
Volume: 15
Number: 42
Article:
Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal–Oxide–Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array
Authors:
by
Hsin-Ying Lee, Ying-Hao Ju, Jen-Inn Chyi and Ching-Ting Lee
Link:
https://www.mdpi.com/1996-1944/15/1/42
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