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Journal: Materials, 2022
Volume: 15
Number: 334
Article:
Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
Authors:
by
Rostislav Velichko, Yusaku Magari and Mamoru Furuta
Link:
https://www.mdpi.com/1996-1944/15/1/334
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