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Journal: Materials, 2022
Volume: 15
Number: 334

Article: Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications
Authors: by Rostislav Velichko, Yusaku Magari and Mamoru Furuta
Link: https://www.mdpi.com/1996-1944/15/1/334

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