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Open AccessArticle

Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film

1
Institute of Applied Physics and Mathematics, Faculty of Chemical Technology, University of Pardubice, Studentska 95, 53210 Pardubice, Czech Republic
2
Center of Materials and Nanotechnologies, Faculty of Chemical Technology, University of Pardubice, Studentska 95, 53210 Pardubice, Czech Republic
3
School of Materials Science and Engineering, Yeungnam University, 280 Daehak-Ro, Gyeongsan, Gyeongbuk 38541, Korea
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Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 95, 53210 Pardubice, Czech Republic
*
Author to whom correspondence should be addressed.
Academic Editor: Sandra Carvalho
Materials 2021, 14(3), 578; https://doi.org/10.3390/ma14030578
Received: 21 December 2020 / Revised: 10 January 2021 / Accepted: 18 January 2021 / Published: 26 January 2021
(This article belongs to the Section Thin Films and Interfaces)
A spectroscopic ellipsometry study on as-deposited and annealed non-stoichiometric indium zinc tin oxide thin films of four different compositions prepared by RF magnetron sputtering was conducted. Multi-sample analysis with two sets of samples sputtered onto glass slides and silicon wafers, together with the analysis of the samples onto each substrate separately, was utilized for as-deposited samples. Annealed samples onto the glass slides were also analyzed. Spectroscopic ellipsometry in a wide spectral range (0.2–6 eV) was used to determine optical constants (refractive index n and extinction coefficient k) of these films. Parameterized semiconductor oscillator function, together with Drude oscillator, was used as a model dielectric function. Geometrical parameters (layer thickness and surface roughness) and physical parameters (direct optical bandgap, free carrier concentration, mobility, and specific electrical resistivity) were determined from spectroscopic ellipsometry data modeling. Specific electrical resistivity determined from the Drude oscillator corresponds well with the results from electrical measurements. Change in the optical bandgap, visible especially for annealed samples, corresponds with the change of free carrier concentration (Moss–Burstein effect). Scanning electron microscope did not reveal any noticeable annealing-induced change in surface morphology. View Full-Text
Keywords: optical properties; spectroscopic ellipsometry; RF magnetron sputtering; indium zinc tin oxide; non-stoichiometric optical properties; spectroscopic ellipsometry; RF magnetron sputtering; indium zinc tin oxide; non-stoichiometric
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MDPI and ACS Style

Janicek, P.; Putri, M.; Kim, K.H.; Lee, H.J.; Bouska, M.; Šlang, S.; Lee, H.Y. Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film. Materials 2021, 14, 578. https://doi.org/10.3390/ma14030578

AMA Style

Janicek P, Putri M, Kim KH, Lee HJ, Bouska M, Šlang S, Lee HY. Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film. Materials. 2021; 14(3):578. https://doi.org/10.3390/ma14030578

Chicago/Turabian Style

Janicek, Petr; Putri, Maryane; Kim, Ki H.; Lee, Hye J.; Bouska, Marek; Šlang, Stanislav; Lee, Hee Y. 2021. "Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film" Materials 14, no. 3: 578. https://doi.org/10.3390/ma14030578

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