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10.3390/ma14195831
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Review

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

by
Fan Li
1,
Fabrizio Roccaforte
2,
Giuseppe Greco
2,
Patrick Fiorenza
2,
Francesco La Via
2,
Amador Pérez-Tomas
3,
Jonathan Edward Evans
4,
Craig Arthur Fisher
4,
Finn Alec Monaghan
4,
Philip Andrew Mawby
5 and
Mike Jennings
4,*
1
Newport Wafer Fab, Cardiff Rd, Duffryn, Newport NP10 8YJ, UK
2
Consiglio Nazionale delle Ricerche—Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII n. 5-Zona Industriale, 95121 Catania, Italy
3
Institut Català de Nanociència i Nanotecnologia (ICN2), Universitat Autònoma de Barcelona, 08193 Barcelona, Spain
4
Faculty of Science, Bay Campus, College of Engineering, Swansea University, Fabian Way, Crymlyn Burrows, Skewen, Swansea SA1 8EN, UK
5
School of Engineering, The University of Warwick, Gibbet Hill Rd, Coventry CV4 7AL, UK
*
Author to whom correspondence should be addressed.
Materials 2021, 14(19), 5831; https://doi.org/10.3390/ma14195831
Submission received: 20 July 2021 / Revised: 24 September 2021 / Accepted: 25 September 2021 / Published: 5 October 2021
(This article belongs to the Special Issue Feature Papers in Electronic Materials Section)
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Abstract

Wide bandgap (WBG) semiconductors are becoming more widely accepted for use in power electronics due to their superior electrical energy efficiencies and improved power densities. Although WBG cubic silicon carbide (3C-SiC) displays a modest bandgap compared to its commercial counterparts (4H-silicon carbide and gallium nitride), this material has excellent attributes as the WBG semiconductor of choice for low-resistance, reliable diode and MOS devices. At present the material remains firmly in the research domain due to numerous technological impediments that hamper its widespread adoption. The most obvious obstacle is defect-free 3C-SiC; presently, 3C-SiC bulk and heteroepitaxial (on-silicon) display high defect densities such as stacking faults and antiphase boundaries. Moreover, heteroepitaxy 3C-SiC-on-silicon means low temperature processing budgets are imposed upon the system (max. temperature limited to ~1400 °C) limiting selective doping realisation. This paper will give a brief overview of some of the scientific aspects associated with 3C-SiC processing technology in addition to focussing on the latest state of the art results. A particular focus will be placed upon key process steps such as Schottky and ohmic contacts, ion implantation and MOS processing including reliability. Finally, the paper will discuss some device prototypes (diodes and MOSFET) and draw conclusions around the prospects for 3C-SiC devices based upon the processing technology presented.
Keywords: 3C-SiC; cubic silicon carbide; power electronics 3C-SiC; cubic silicon carbide; power electronics

Share and Cite

MDPI and ACS Style

Li, F.; Roccaforte, F.; Greco, G.; Fiorenza, P.; La Via, F.; Pérez-Tomas, A.; Evans, J.E.; Fisher, C.A.; Monaghan, F.A.; Mawby, P.A.; et al. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials 2021, 14, 5831. https://doi.org/10.3390/ma14195831

AMA Style

Li F, Roccaforte F, Greco G, Fiorenza P, La Via F, Pérez-Tomas A, Evans JE, Fisher CA, Monaghan FA, Mawby PA, et al. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials. 2021; 14(19):5831. https://doi.org/10.3390/ma14195831

Chicago/Turabian Style

Li, Fan, Fabrizio Roccaforte, Giuseppe Greco, Patrick Fiorenza, Francesco La Via, Amador Pérez-Tomas, Jonathan Edward Evans, Craig Arthur Fisher, Finn Alec Monaghan, Philip Andrew Mawby, and et al. 2021. "Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology" Materials 14, no. 19: 5831. https://doi.org/10.3390/ma14195831

APA Style

Li, F., Roccaforte, F., Greco, G., Fiorenza, P., La Via, F., Pérez-Tomas, A., Evans, J. E., Fisher, C. A., Monaghan, F. A., Mawby, P. A., & Jennings, M. (2021). Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology. Materials, 14(19), 5831. https://doi.org/10.3390/ma14195831

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