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Article

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

1
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China
3
Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China
4
Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China
5
Department of Physics, School of Science, Wuhan University of Technology, Wuhan 430070, China
*
Author to whom correspondence should be addressed.
Academic Editor: Fabrizio Roccaforte
Materials 2021, 14(18), 5339; https://doi.org/10.3390/ma14185339
Received: 31 August 2021 / Revised: 10 September 2021 / Accepted: 13 September 2021 / Published: 16 September 2021
(This article belongs to the Section Materials Physics)
This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy. View Full-Text
Keywords: InGaN; hole; interstitial Mg InGaN; hole; interstitial Mg
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MDPI and ACS Style

Zhang, L.; Wang, R.; Liu, Z.; Cheng, Z.; Tong, X.; Xu, J.; Zhang, S.; Zhang, Y.; Chen, F. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD. Materials 2021, 14, 5339. https://doi.org/10.3390/ma14185339

AMA Style

Zhang L, Wang R, Liu Z, Cheng Z, Tong X, Xu J, Zhang S, Zhang Y, Chen F. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD. Materials. 2021; 14(18):5339. https://doi.org/10.3390/ma14185339

Chicago/Turabian Style

Zhang, Lian, Rong Wang, Zhe Liu, Zhe Cheng, Xiaodong Tong, Jianxing Xu, Shiyong Zhang, Yun Zhang, and Fengxiang Chen. 2021. "Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD" Materials 14, no. 18: 5339. https://doi.org/10.3390/ma14185339

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