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Journal: Materials, 2021
Volume: 14
Number: 5339
Article:
Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD
Authors:
by
Lian Zhang, Rong Wang, Zhe Liu, Zhe Cheng, Xiaodong Tong, Jianxing Xu, Shiyong Zhang, Yun Zhang and Fengxiang Chen
Link:
https://www.mdpi.com/1996-1944/14/18/5339
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