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Volume 14
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10.3390/ma14185221
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Article

Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate

by
Piotr Andrzej Wroński
1,*,
Paweł Wyborski
2,*,
Anna Musiał
2,
Paweł Podemski
2,
Grzegorz Sęk
2,
Sven Höfling
1 and
Fauzia Jabeen
1,3
1
Technische Physik, University of Würzburg and Wilhelm-Conrad-Röntgen-Research Center for Complex Material Systems, Am Hubland, D-97074 Würzburg, Germany
2
Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
3
Quantum Light and Matter Group, Faculty of Engineering and Physical Sciences, University of Southampton, Southampton SO17 1BJ, UK
*
Authors to whom correspondence should be addressed.
Materials 2021, 14(18), 5221; https://doi.org/10.3390/ma14185221
Submission received: 26 July 2021 / Revised: 6 September 2021 / Accepted: 7 September 2021 / Published: 10 September 2021
(This article belongs to the Special Issue Optical Properties and Application Prospects of Novel Epitaxial Nanostructures)
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Abstract

We demonstrate single-photon emission with a low probability of multiphoton events of 5% in the C-band of telecommunication spectral range of standard silica fibers from molecular beam epitaxy grown (100)-GaAs-based structure with InAs quantum dots (QDs) on a metamorphic buffer layer. For this purpose, we propose and implement graded In content digitally alloyed InGaAs metamorphic buffer layer with maximal In content of 42% and GaAs/AlAs distributed Bragg reflector underneath to enhance the extraction efficiency of QD emission. The fundamental limit of the emission rate for the investigated structures is 0.5 GHz based on an emission lifetime of 1.95 ns determined from time-resolved photoluminescence. We prove the relevance of a proposed technology platform for the realization of non-classical light sources in the context of fiber-based quantum communication applications.
Keywords: single-photon source; quantum dots; telecommunication spectral range; metamorphic buffer layer single-photon source; quantum dots; telecommunication spectral range; metamorphic buffer layer
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MDPI and ACS Style

Wroński, P.A.; Wyborski, P.; Musiał, A.; Podemski, P.; Sęk, G.; Höfling, S.; Jabeen, F. Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate. Materials 2021, 14, 5221. https://doi.org/10.3390/ma14185221

AMA Style

Wroński PA, Wyborski P, Musiał A, Podemski P, Sęk G, Höfling S, Jabeen F. Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate. Materials. 2021; 14(18):5221. https://doi.org/10.3390/ma14185221

Chicago/Turabian Style

Wroński, Piotr Andrzej, Paweł Wyborski, Anna Musiał, Paweł Podemski, Grzegorz Sęk, Sven Höfling, and Fauzia Jabeen. 2021. "Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate" Materials 14, no. 18: 5221. https://doi.org/10.3390/ma14185221

APA Style

Wroński, P. A., Wyborski, P., Musiał, A., Podemski, P., Sęk, G., Höfling, S., & Jabeen, F. (2021). Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate. Materials, 14(18), 5221. https://doi.org/10.3390/ma14185221

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