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10.3390/ma14175107
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Article

Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing

by
Zhen Yang
1,*,
Zhiping Zou
1,
Zeyang Zhang
1,
Yubo Xing
1 and
Tao Wang
2,*
1
Sino-French Institute of Nuclear Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
2
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China
*
Authors to whom correspondence should be addressed.
Materials 2021, 14(17), 5107; https://doi.org/10.3390/ma14175107
Submission received: 13 August 2021 / Revised: 2 September 2021 / Accepted: 4 September 2021 / Published: 6 September 2021
(This article belongs to the Special Issue Experiment and Calculation Simulation to Study Hydrogen-Helium Effect Mechanism in Materials)
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Abstract

Si single crystal was implanted with 230 keV He+ ions to a fluence of 5 × 1016/cm2 at 600 °C. The structural defects in Si implanted with He at 600 °C and then annealed at 1000 °C were investigated by transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The microstructure of an as-implanted sample is provided for comparison. After annealing, rod-like defects were diminished, while tangled dislocations and large dislocation loops appeared. Dislocation lines trapped by cavities were directly observed. The cavities remained stable except for a transition of shape, from octahedron to tetrakaidecahedron. Stacking-fault tetrahedrons were found simultaneously. Cavity growth was independent of dislocations. The evolution of observed lattice defects is discussed.
Keywords: microstructure; cavities; he implantation; annealing microstructure; cavities; he implantation; annealing

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MDPI and ACS Style

Yang, Z.; Zou, Z.; Zhang, Z.; Xing, Y.; Wang, T. Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing. Materials 2021, 14, 5107. https://doi.org/10.3390/ma14175107

AMA Style

Yang Z, Zou Z, Zhang Z, Xing Y, Wang T. Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing. Materials. 2021; 14(17):5107. https://doi.org/10.3390/ma14175107

Chicago/Turabian Style

Yang, Zhen, Zhiping Zou, Zeyang Zhang, Yubo Xing, and Tao Wang. 2021. "Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing" Materials 14, no. 17: 5107. https://doi.org/10.3390/ma14175107

APA Style

Yang, Z., Zou, Z., Zhang, Z., Xing, Y., & Wang, T. (2021). Microstructure Evolution in He-Implanted Si at 600 °C Followed by 1000 °C Annealing. Materials, 14(17), 5107. https://doi.org/10.3390/ma14175107

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