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Journal: Materials, 2021
Volume: 14
Number: 3554

Article: 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics
Authors: by Jaeyeop Na, Jinhee Cheon and Kwangsoo Kim
Link: https://www.mdpi.com/1996-1944/14/13/3554

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