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Journal: Materials, 2020
Volume: 13
Number: 1935
Article:
Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
Authors:
by
Daichi Koretomo, Shuhei Hamada, Yusaku Magari and Mamoru Furuta
Link:
https://www.mdpi.com/1996-1944/13/8/1935
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