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Journal: Materials, 2020
Volume: 13
Number: 1935

Article: Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors
Authors: by Daichi Koretomo, Shuhei Hamada, Yusaku Magari and Mamoru Furuta
Link: https://www.mdpi.com/1996-1944/13/8/1935

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