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Journal: Materials, 2020
Volume: 13
Number: 1538
Article:
Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate
Authors:
by
Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, Kwang-Seok Seo and Ho-Young Cha
Link:
https://www.mdpi.com/1996-1944/13/7/1538
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