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Memristive and CMOS Devices for Neuromorphic Computing
Open AccessArticle

Multi-Terminal Transistor-Like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications

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Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, Spain
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Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Barcelona, Spain
*
Authors to whom correspondence should be addressed.
Materials 2020, 13(2), 281; https://doi.org/10.3390/ma13020281
Received: 14 November 2019 / Revised: 24 December 2019 / Accepted: 3 January 2020 / Published: 8 January 2020
Memristive devices are attracting a great attention for memory, logic, neural networks, and sensing applications due to their simple structure, high density integration, low-power consumption, and fast operation. In particular, multi-terminal structures controlled by active gates, able to process and manipulate information in parallel, would certainly provide novel concepts for neuromorphic systems. In this way, transistor-based synaptic devices may be designed, where the synaptic weight in the postsynaptic membrane is encoded in a source-drain channel and modified by presynaptic terminals (gates). In this work, we show the potential of reversible field-induced metal-insulator transition (MIT) in strongly correlated metallic oxides for the design of robust and flexible multi-terminal memristive transistor-like devices. We have studied different structures patterned on YBa2Cu3O7−δ films, which are able to display gate modulable non-volatile volume MIT, driven by field-induced oxygen diffusion within the system. The key advantage of these materials is the possibility to homogeneously tune the oxygen diffusion not only in a confined filament or interface, as observed in widely explored binary and complex oxides, but also in the whole material volume. Another important advantage of correlated oxides with respect to devices based on conducting filaments is the significant reduction of cycle-to-cycle and device-to-device variations. In this work, we show several device configurations in which the lateral conduction between a drain-source channel (synaptic weight) is effectively controlled by active gate-tunable volume resistance changes, thus providing the basis for the design of robust and flexible transistor-based artificial synapses. View Full-Text
Keywords: strongly correlated oxides; resistive switching; neuromorphic computing; transistor-like devices strongly correlated oxides; resistive switching; neuromorphic computing; transistor-like devices
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Fernández-Rodríguez, A.; Alcalà, J.; Suñe, J.; Mestres, N.; Palau, A. Multi-Terminal Transistor-Like Devices Based on Strongly Correlated Metallic Oxides for Neuromorphic Applications. Materials 2020, 13, 281.

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