P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping
AbstractNitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices. View Full-Text
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Li, W.; Cui, J.; Wang, W.; Zheng, D.; Jia, L.; Saeed, S.; Liu, H.; Rupp, R.; Kong, Y.; Xu, J. P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping. Materials 2019, 12, 819.
Li W, Cui J, Wang W, Zheng D, Jia L, Saeed S, Liu H, Rupp R, Kong Y, Xu J. P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping. Materials. 2019; 12(5):819.Chicago/Turabian Style
Li, Wencan; Cui, Jiao; Wang, Weiwei; Zheng, Dahuai; Jia, Longfei; Saeed, Shahzad; Liu, Hongde; Rupp, Romano; Kong, Yongfa; Xu, Jingjun. 2019. "P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping." Materials 12, no. 5: 819.
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