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Open AccessArticle

P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

1
The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China
2
School of Physics, Nankai University, Tianjin 300071, China
3
Faculty of Physics, University of Vienna, 1090 Vienna, Austria
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(5), 819; https://doi.org/10.3390/ma12050819
Received: 19 February 2019 / Revised: 2 March 2019 / Accepted: 8 March 2019 / Published: 11 March 2019
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
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Abstract

Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices. View Full-Text
Keywords: lithium niobate film; pulsed laser deposition; nitrogen-doped; p-type conductivity lithium niobate film; pulsed laser deposition; nitrogen-doped; p-type conductivity
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Li, W.; Cui, J.; Wang, W.; Zheng, D.; Jia, L.; Saeed, S.; Liu, H.; Rupp, R.; Kong, Y.; Xu, J. P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping. Materials 2019, 12, 819.

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