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Open AccessArticle

P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping

The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China
School of Physics, Nankai University, Tianjin 300071, China
Faculty of Physics, University of Vienna, 1090 Vienna, Austria
Authors to whom correspondence should be addressed.
Materials 2019, 12(5), 819;
Received: 19 February 2019 / Revised: 2 March 2019 / Accepted: 8 March 2019 / Published: 11 March 2019
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
PDF [1297 KB, uploaded 11 March 2019]


Nitrogen-doped lithium niobate (LiNbO3:N) thin films were successfully fabricated on a Si-substrate using a nitrogen plasma beam supplied through a radio-frequency plasma apparatus as a dopant source via a pulsed laser deposition (PLD). The films were then characterized using X-Ray Diffraction (XRD) as polycrystalline with the predominant orientations of (012) and (104). The perfect surface appearance of the film was investigated by atomic force microscopy and Hall-effect measurements revealed a rare p-type conductivity in the LiNbO3:N thin film. The hole concentration was 7.31 × 1015 cm−3 with a field-effect mobility of 266 cm2V−1s−1. X-ray Photoelectron Spectroscopy (XPS) indicated that the atom content of nitrogen was 0.87%; N atoms were probably substituted for O sites, which contributed to the p-type conductivity. The realization of p-type LiNbO3:N thin films grown on the Si substrate lead to improvements in the manufacturing of novel optoelectronic devices. View Full-Text
Keywords: lithium niobate film; pulsed laser deposition; nitrogen-doped; p-type conductivity lithium niobate film; pulsed laser deposition; nitrogen-doped; p-type conductivity

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Li, W.; Cui, J.; Wang, W.; Zheng, D.; Jia, L.; Saeed, S.; Liu, H.; Rupp, R.; Kong, Y.; Xu, J. P-Type Lithium Niobate Thin Films Fabricated by Nitrogen-Doping. Materials 2019, 12, 819.

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