Article Versions Notes

Yoshino M, Ando Y, Deki M, Toyabe T, Kuriyama K, Honda Y, Nishimura T, Amano H, Kachi T, Nakamura T. Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics. Materials. 2019; 12(5):689. https://doi.org/10.3390/ma12050689

Yoshino, Michitaka, Yuto Ando, Manato Deki, Toru Toyabe, Kazuo Kuriyama, Yoshio Honda, Tomoaki Nishimura, Hiroshi Amano, Tetsu Kachi, and Tohru Nakamura. 2019. "Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics" Materials 12, no. 5: 689. https://doi.org/10.3390/ma12050689

Yoshino, M., Ando, Y., Deki, M., Toyabe, T., Kuriyama, K., Honda, Y., Nishimura, T., Amano, H., Kachi, T., & Nakamura, T. (2019). Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics. Materials, 12(5), 689. https://doi.org/10.3390/ma12050689