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Journal: Materials, 2019
Volume: 12
Number: 3236
3236
Article: Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density
Authors: by Ayata Kurasaki, Ryo Tanaka, Sumio Sugisaki, Tokiyoshi Matsuda, Daichi Koretomo, Yusaku Magari, Mamoru Furuta and Mutsumi Kimura
Link: https://www.mdpi.com/1996-1944/12/19/3236

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