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Open AccessArticle

Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density

1
Department of Electronics and Informatics, Faculty of Science and Technology, Ryukoku University, Seta, Otsu 520-2194, Japan
2
Innovative Materials and Processing Research Center, High-Tech Research Center, Ryukoku University, Seta, Otsu 520-2194, Japan
3
School of Environmental Science and Engineering, Graduate School of Engineering, Kochi University of Technology, Kami, Kochi 782-8502, Japan
4
Division of Information Science, Graduate School of Science and Technology, Nara Institute of Science and Technology (NAIST), Takayama, Ikoma 630-0192, Japan
*
Author to whom correspondence should be addressed.
Materials 2019, 12(19), 3236; https://doi.org/10.3390/ma12193236
Received: 14 September 2019 / Revised: 28 September 2019 / Accepted: 2 October 2019 / Published: 2 October 2019
We have found a memristive characteristic of an amorphous Ga-Sn-O (α-GTO) thin-film device with double layers of different oxygen density. The double layers are deposited using radio frequency (RF) magnetron sputtering, whose gas for the lower layer contains less oxygen, whereas that for the upper layer contains more oxygen, and it is assumed that the former contains more oxygen vacancies, whereas the latter contains fewer vacancies. The characteristic is explained by drift of oxygen and is stable without forming operation because additional structures such as filament are unnecessary. The fabrication is easy because the double layers are successively deposited simply by changing the oxygen ratio in the chamber. View Full-Text
Keywords: memristive characteristic; amorphous Ga-Sn-O (α-GTO); thin-film device; oxygen density memristive characteristic; amorphous Ga-Sn-O (α-GTO); thin-film device; oxygen density
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MDPI and ACS Style

Kurasaki, A.; Tanaka, R.; Sugisaki, S.; Matsuda, T.; Koretomo, D.; Magari, Y.; Furuta, M.; Kimura, M. Memristive Characteristic of an Amorphous Ga-Sn-O Thin-Film Device with Double Layers of Different Oxygen Density. Materials 2019, 12, 3236.

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