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Review

Functional Ferroic Domain Walls for Nanoelectronics

by 1,2,*, 1,* and 1,2,*
1
School of Materials Science and Engineering, UNSW Sydney, Sydney, NSW 2052, Australia
2
ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), UNSW Sydney, Sydney, NSW 2052, Australia
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(18), 2927; https://doi.org/10.3390/ma12182927
Received: 20 August 2019 / Revised: 5 September 2019 / Accepted: 6 September 2019 / Published: 10 September 2019
(This article belongs to the Special Issue Advances in Multiferroics)
A prominent challenge towards novel nanoelectronic technologies is to understand and control materials functionalities down to the smallest scale. Topological defects in ordered solid-state (multi-)ferroic materials, e.g., domain walls, are a promising gateway towards alternative sustainable technologies. In this article, we review advances in the field of domain walls in ferroic materials with a focus on ferroelectric and multiferroic systems and recent developments in prototype nanoelectronic devices. View Full-Text
Keywords: ferroelectrics; multiferroics; domain walls; topological defects; nanoelectronics ferroelectrics; multiferroics; domain walls; topological defects; nanoelectronics
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MDPI and ACS Style

Sharma, P.; Schoenherr, P.; Seidel, J. Functional Ferroic Domain Walls for Nanoelectronics. Materials 2019, 12, 2927. https://doi.org/10.3390/ma12182927

AMA Style

Sharma P, Schoenherr P, Seidel J. Functional Ferroic Domain Walls for Nanoelectronics. Materials. 2019; 12(18):2927. https://doi.org/10.3390/ma12182927

Chicago/Turabian Style

Sharma, Pankaj, Peggy Schoenherr, and Jan Seidel. 2019. "Functional Ferroic Domain Walls for Nanoelectronics" Materials 12, no. 18: 2927. https://doi.org/10.3390/ma12182927

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