Native Point Defect Measurement and Manipulation in ZnO Nanostructures
by
Leonard Brillson 1,*, Jonathan Cox 2, Hantian Gao 3, Geoffrey Foster 3, William Ruane 3, Alexander Jarjour 4, Martin Allen 5
, David Look 6,7, Holger von Wenckstern 8 and Marius Grundmann 8
Leonard Brillson 1,*, Jonathan Cox 2, Hantian Gao 3, Geoffrey Foster 3, William Ruane 3, Alexander Jarjour 4, Martin Allen 5, David Look 6,7, Holger von Wenckstern 8 and Marius Grundmann 8
1
Department of Physics and Department of Electrical & Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
2
Department of Physics, The Ohio State University, Columbus, OH 43210, USA
3
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH 43210, USA
4
Department of Physics, Cornell University, Ithaca, NY 14853, USA
5
Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8140, New Zealand
6
Air Force Research Laboratory, Sensors Directorate, WPAFB, OH 45433, USA
7
Semiconductor Research Center, Wright State University, Dayton, OH 45435, USA
8
Institut für Experimentelle Physik II, Universität Leipzig, Linnéstr. 5, 04103 Leipzig, Germany
*
Author to whom correspondence should be addressed.
Materials 2019, 12(14), 2242; https://doi.org/10.3390/ma12142242
Received: 20 June 2019 / Revised: 3 July 2019 / Accepted: 4 July 2019 / Published: 12 July 2019
(This article belongs to the Special Issue Metal Oxide Nanostructure for Solid-State Electronics and Sensors)
This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- and micro- wire electronic properties. From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-active native point defects are present inside, as well as at the surfaces of, ZnO and other semiconductor nanostructures. These defects within nanowires and at their metal interfaces can dominate electrical contact properties, yet they are sensitive to manipulation by chemical interactions, energy beams, as well as applied electrical fields. Non-uniform defect distributions are common among semiconductors, and their effects are magnified in semiconductor nanostructures so that their electronic effects are significant. The ability to measure native point defects directly on a nanoscale and manipulate their spatial distributions by multiple techniques presents exciting possibilities for future ZnO nanoscale electronics.
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Keywords:
native point defects; cathodoluminescence spectroscopy; nanowires; nanostructures; interface; electronic measurement
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited
MDPI and ACS Style
Brillson, L.; Cox, J.; Gao, H.; Foster, G.; Ruane, W.; Jarjour, A.; Allen, M.; Look, D.; von Wenckstern, H.; Grundmann, M. Native Point Defect Measurement and Manipulation in ZnO Nanostructures. Materials 2019, 12, 2242.
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