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Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition

Key Laboratory of Poyang Lake Environment and Resource Utilization, Nanchang University, Ministry of Education, School of Resources Environmental & Chemical Engineering, Nanchang University, Nanchang 330031, China
Institute for Advanced Study, Nanchang University, Nanchang 330031, China
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA
Authors to whom correspondence should be addressed.
Materials 2019, 12(12), 1887;
Received: 14 May 2019 / Revised: 6 June 2019 / Accepted: 10 June 2019 / Published: 12 June 2019
(This article belongs to the Section Carbon Materials)
PDF [5302 KB, uploaded 12 June 2019]


U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate. View Full-Text
Keywords: graphene; U-shaped; CVD graphene; U-shaped; CVD

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Pan, M.; Wang, C.; Li, H.-F.; Xie, N.; Wu, P.; Wang, X.-D.; Zeng, Z.; Deng, S.; Dai, G.-P. Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition. Materials 2019, 12, 1887.

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