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ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition

1
College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
2
Tsinghua-Berkeley Shenzhen Institute (TBSI), Tsinghua University, Shenzhen 518055, China
*
Authors to whom correspondence should be addressed.
Materials 2019, 12(12), 1883; https://doi.org/10.3390/ma12121883
Received: 16 May 2019 / Revised: 5 June 2019 / Accepted: 6 June 2019 / Published: 12 June 2019
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Abstract

Monolayer tungsten disulfide (2D WS2) films have attracted tremendous interest due to their unique electronic and optoelectronic properties. However, the controlled growth of monolayer WS2 is still challenging. In this paper, we report a novel method to grow WS2 through chemical vapor deposition (CVD) with ZnO crystalline whisker as a growth promoter, where partially evaporated WS2 reacts with ZnO to form ZnWO4 by-product. As a result, a depletion region of W atoms and S-rich region is formed which is favorable for subsequent monolayer growth of WS2, selectively positioned on the silicon oxide substrate after the CVD growth. View Full-Text
Keywords: monolayer WS2; ZnO; CVD; controlled growth monolayer WS2; ZnO; CVD; controlled growth
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Xu, Z.; Lv, Y.; Huang, F.; Zhao, C.; Zhao, S.; Wei, G. ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition. Materials 2019, 12, 1883.

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