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Materials 2018, 11(9), 1601; https://doi.org/10.3390/ma11091601

Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment

Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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Received: 6 August 2018 / Revised: 29 August 2018 / Accepted: 31 August 2018 / Published: 3 September 2018
(This article belongs to the Section Structure Analysis and Characterization)
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Abstract

The impact of stress relieved preoxide (SRPO) interface engineering on the physical and electrical properties of LaxAlyO films was investigated. It was proved that the SRPO pretreatment has little influence on the surface morphology of LaxAlyO films and the chemical bond composition of LaxAlyO/Si interface. However, the SRPO pretreated MIS capacitor displayed obvious improvement in decreasing the amount of trapped oxide charges and interfacial traps. As a result, a reduction of more than one order of magnitude in the gate leakage current density was obtained. The breakdown field strength and TDDB reliability of the LaxAlyO film treated with SRPO were also enhanced. View Full-Text
Keywords: ALD; LaxAlyO; SRPO; electrical properties ALD; LaxAlyO; SRPO; electrical properties
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Wang, X.; Liu, H.; Zhao, L.; Wang, Y. Enhanced Electrical Properties of Atomic Layer Deposited LaxAlyO Thin Films with Stress Relieved Preoxide Pretreatment. Materials 2018, 11, 1601.

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