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Materials 2018, 11(8), 1400;

TiN Films Deposited on Uranium by High Power Pulsed Magnetron Sputtering under Low Temperature

Institute of Material, China Academy of Engineering Physics, Mianyang 621900, China
Author to whom correspondence should be addressed.
Received: 10 July 2018 / Revised: 4 August 2018 / Accepted: 6 August 2018 / Published: 10 August 2018
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Depleted uranium (DU) is oxidized readily due to its chemical activities, which limits its applications in nuclear industry. TiN film has been applied widely due to its good mechanical properties and its excellent corrosion resistance. In this work, TiN protection films were deposited on DU by direct current magnetron sputtering (DCMS) and high power pulsed magnetron sputtering (HPPMS), respectively. The surface morphology and microstructures were investigated by atomic force microscope (AFM), scanning electron microscopy (SEM), and grazing incidence X-ray diffraction (GIXRD). The hardness and Young’s modulus were determined by nano-Indenter. The wear behavior and adhesion was analyzed by pin-on-disc tests and scratch adhesion tests and the corrosion resistance was evaluated by electrochemical measurements. The results show that the TiN films that were deposited by HPPMS outperformed TiN film deposited by DCMS, with improvements on surface roughness, mechanical properties, wear behavior, adhesion strength, and corrosion resistance, thanks to its much denser columnar grain growth structure and preferred orientation of (111) plane with the lowest strain energy. Besides, the process of Ti interlayer deposition by HPPMS can enhance the film properties to an extent as compared to DCMS, which is attributed to the enhanced ion bombardment during the HPPMS. View Full-Text
Keywords: DU; TiN film; HPPMS DU; TiN film; HPPMS

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Ding, J.; Yin, X.; Fang, L.; Meng, X.; Yin, A. TiN Films Deposited on Uranium by High Power Pulsed Magnetron Sputtering under Low Temperature. Materials 2018, 11, 1400.

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