Next Article in Journal
A Study on Preparation and Stabilizing Mechanism of Hydrophobic Silica Nanofluids
Previous Article in Journal
Surface Quality Enhancement of Fused Deposition Modeling (FDM) Printed Samples Based on the Selection of Critical Printing Parameters
Open AccessReview

Ga-Based Alloys in Microelectronic Interconnects: A Review

Nihon Superior Centre for the Manufacture of Electronic Materials (NS CMEM), School of Mechanical and Mining Engineering, The University of Queensland, Brisbane 4072, QLD, Australia
Nihon Superior Co., Ltd, Suita City, Osaka 564-0063, Japan
Author to whom correspondence should be addressed.
Materials 2018, 11(8), 1384;
Received: 6 June 2018 / Revised: 25 July 2018 / Accepted: 6 August 2018 / Published: 8 August 2018
(This article belongs to the Section Manufacturing Processes and Systems)
Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials—including oxides—found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the liquid state. Their potential for enabling the miniaturisation and deformability of microelectronic devices has also been demonstrated. The low process temperatures, made possible by their low melting points, produce significant energy savings. However, there are still some issues that need to be addressed before their potential can be fully realised. Characterising Ga and Ga-based alloys, and their reactions with materials commonly used in the microelectronic industry, are thus a priority for the electronics industry. This review provides a summary of research related to the applications and characterisation of Ga-based alloys. If the potential of Ga-based alloys for low temperature bonding in microelectronics manufacturing is to be realised, more work needs to be done on their interactions with the wide range of substrate materials now being used in electronic circuitry. View Full-Text
Keywords: Ga-based alloy; room temperature liquid alloy; microelectronic interconnect Ga-based alloy; room temperature liquid alloy; microelectronic interconnect
Show Figures

Figure 1

MDPI and ACS Style

Liu, S.; Sweatman, K.; McDonald, S.; Nogita, K. Ga-Based Alloys in Microelectronic Interconnects: A Review. Materials 2018, 11, 1384.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

Back to TopTop