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Open AccessArticle

A Novel Method of Synthesizing Graphene for Electronic Device Applications

1
Centro de Ciência e Tecnologia de Plasmas e Materiais—PlasMat, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP, Brazil
2
Photonics Division, Instituto de Estudos Avançados, Rodovia dos Tamoios, 12228-001 São Jose dos Campos, SP, Brazil
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Universidade Brasil, Rua Carolina Fonseca 235, 08230-030 São Paulo, SP, Brazil
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Associate Laboratory of Sensors and Materials, Instituto Nacional de Pesquisas Espaciais, 12227-010, São José dos Campos, SP, Brazil
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Institut des Matériaux Jean Rouxel IMN, UMR 6502, Université de Nantes, 2 rue de La Houssinière, BP 32229, Nantes Cedex 44322, France
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(7), 1120; https://doi.org/10.3390/ma11071120
Received: 29 May 2018 / Revised: 23 June 2018 / Accepted: 27 June 2018 / Published: 30 June 2018
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications. View Full-Text
Keywords: graphene synthesis; silicon carbide; thin film; high-power impulse magnetron sputtering; thermal decomposition; electronic devices graphene synthesis; silicon carbide; thin film; high-power impulse magnetron sputtering; thermal decomposition; electronic devices
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MDPI and ACS Style

Galvão, N.; Vasconcelos, G.; Pessoa, R.; Machado, J.; Guerino, M.; Fraga, M.; Rodrigues, B.; Camus, J.; Djouadi, A.; Maciel, H. A Novel Method of Synthesizing Graphene for Electronic Device Applications. Materials 2018, 11, 1120.

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