Next Article in Journal
Analysis of the Secondary Phases Formed by Corrosion of U3Si2-Al Research Reactor Fuel Elements in the Presence of Chloride Rich Brines
Next Article in Special Issue
Phase Stability and Properties of Ti-Nb-Zr Thin Films and Their Dependence on Zr Addition
Previous Article in Journal
High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes
Previous Article in Special Issue
Fabrication of Sputtered Ce/La, La/Ce Oxide Bilayers on AA6061 and AA7075 Aluminum Alloys for the Development of Corrosion Protective Coatings
Article Menu
Issue 7 (July) cover image

Export Article

Open AccessArticle
Materials 2018, 11(7), 1120;

A Novel Method of Synthesizing Graphene for Electronic Device Applications

Centro de Ciência e Tecnologia de Plasmas e Materiais—PlasMat, Instituto Tecnológico de Aeronáutica, 12228-900 São José dos Campos, SP, Brazil
Photonics Division, Instituto de Estudos Avançados, Rodovia dos Tamoios, 12228-001 São Jose dos Campos, SP, Brazil
Universidade Brasil, Rua Carolina Fonseca 235, 08230-030 São Paulo, SP, Brazil
Associate Laboratory of Sensors and Materials, Instituto Nacional de Pesquisas Espaciais, 12227-010, São José dos Campos, SP, Brazil
Institut des Matériaux Jean Rouxel IMN, UMR 6502, Université de Nantes, 2 rue de La Houssinière, BP 32229, Nantes Cedex 44322, France
Authors to whom correspondence should be addressed.
Received: 29 May 2018 / Revised: 23 June 2018 / Accepted: 27 June 2018 / Published: 30 June 2018
(This article belongs to the Special Issue Thin Film Fabrication and Surface Techniques)
Full-Text   |   PDF [2744 KB, uploaded 30 June 2018]   |  


This article reports a novel and efficient method to synthesize graphene using a thermal decomposition process. In this method, silicon carbide (SiC) thin films grown on Si(100) wafers with an AlN buffer layer were used as substrates. CO2 laser beam heating, without vacuum or controlled atmosphere, was applied for SiC thermal decomposition. The physical, chemical, morphological, and electrical properties of the laser-produced graphene were investigated for different laser energy densities. The results demonstrate that graphene was produced in the form of small islands with quality, density, and properties depending on the applied laser energy density. Furthermore, the produced graphene exhibited a sheet resistance characteristic similar to graphene grown on mono-crystalline SiC wafers, which indicates its potential for electronic device applications. View Full-Text
Keywords: graphene synthesis; silicon carbide; thin film; high-power impulse magnetron sputtering; thermal decomposition; electronic devices graphene synthesis; silicon carbide; thin film; high-power impulse magnetron sputtering; thermal decomposition; electronic devices

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Galvão, N.; Vasconcelos, G.; Pessoa, R.; Machado, J.; Guerino, M.; Fraga, M.; Rodrigues, B.; Camus, J.; Djouadi, A.; Maciel, H. A Novel Method of Synthesizing Graphene for Electronic Device Applications. Materials 2018, 11, 1120.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top