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Open AccessArticle

Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons

1
Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Girolamo Caruso 16, 56122 Pisa, Italy
2
Univ. Grenoble Alpes, CNRS, Grenoble INP, IMEP-LaHC, F-38000 Grenoble, France
3
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, 08193 Barcelona, Spain
4
ICREA—Institució Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain
*
Author to whom correspondence should be addressed.
Materials 2018, 11(5), 667; https://doi.org/10.3390/ma11050667
Received: 13 March 2018 / Revised: 21 April 2018 / Accepted: 23 April 2018 / Published: 25 April 2018
(This article belongs to the Special Issue Recent Advances in 2D Nanomaterials)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I O N / I O F F ratio of the transistor. Here we study how this effect depends on the length of the doped channel. By means of self-consistent simulations based on a tight-binding description and a non-equilibrium Green’s function approach, we demonstrate a promising increase of the I O N / I O F F ratio with the length of the channel, as a consequence of the different transport regimes in the ON and OFF states. Therefore, the adoption of doped ribbons with longer aspect ratios could represent a significant step toward graphene-based transistors with an improved switching behavior. View Full-Text
Keywords: graphene ribbon; transistor; boron doping; channel length; transport; ION/IOFF ratio; mobility gap graphene ribbon; transistor; boron doping; channel length; transport; ION/IOFF ratio; mobility gap
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MDPI and ACS Style

Marconcini, P.; Cresti, A.; Roche, S. Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons. Materials 2018, 11, 667.

AMA Style

Marconcini P, Cresti A, Roche S. Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons. Materials. 2018; 11(5):667.

Chicago/Turabian Style

Marconcini, Paolo; Cresti, Alessandro; Roche, Stephan. 2018. "Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons" Materials 11, no. 5: 667.

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