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Open AccessArticle

Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor

1
School of Electronics Engineering, Kyungpook National University, Daegu 41566, Korea
2
Materials and Energy Measurement Center, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
3
Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 34113, Korea
4
Eugene Technology Materials, Gyeonggi-do 16675, Korea
5
Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
6
Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea
7
Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Korea
*
Authors to whom correspondence should be addressed.
These authors contributed equally to this study.
Materials 2018, 11(3), 386; https://doi.org/10.3390/ma11030386
Received: 30 January 2018 / Revised: 26 February 2018 / Accepted: 1 March 2018 / Published: 5 March 2018
The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity. View Full-Text
Keywords: cocktail precursor; atomic layer deposition; ZrO2; CpZr[N(CH3)2]3/C7H8; capacitor cocktail precursor; atomic layer deposition; ZrO2; CpZr[N(CH3)2]3/C7H8; capacitor
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An, J.-K.; Chung, N.-K.; Kim, J.-T.; Hahm, S.-H.; Lee, G.; Lee, S.B.; Lee, T.; Park, I.-S.; Yun, J.-Y. Effect of Growth Temperature on the Structural and Electrical Properties of ZrO2 Films Fabricated by Atomic Layer Deposition Using a CpZr[N(CH3)2]3/C7H8 Cocktail Precursor. Materials 2018, 11, 386.

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