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Open AccessLetter

Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via

1
Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
2
University of Chinese Academy of Sciences, Beijing 100049, China
3
Institute of Scientific and Industrial Research, Osaka University, Osaka 5670047, Japan
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(2), 319; https://doi.org/10.3390/ma11020319
Received: 27 December 2017 / Revised: 17 February 2018 / Accepted: 19 February 2018 / Published: 23 February 2018
This paper is the first to report a large-scale directcurrent electrodeposition of columnar nanotwinned copper within through silicon via (TSV) with a high aspect ratio (~4). With this newly developed technique, void-free nanotwinned copper array could be fabricated in low current density (30 mA/cm2) and convection conditions (300 rpm), which are the preconditions for copper deposition with a uniform deep-hole microstructure. The microstructure of a whole cross-section of deposited copper array was made up of (111) orientated columnar grains with parallel nanoscale twins that had thicknesses of about 22 nm. The hardness was also uniform along the growth direction, with 2.34 and 2.68 GPa for the top and bottom of the TSV, respectively. The gelatin additive is also first reported hereas a key factor in forming nanoscale twins by adsorbing on the cathode surface, in order to enhance the overpotential for cathodic reaction during the copper deposition process. View Full-Text
Keywords: large-scale electrodeposition; nanotwinned copper; through silicon via; gelatin adsorption large-scale electrodeposition; nanotwinned copper; through silicon via; gelatin adsorption
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MDPI and ACS Style

Sun, F.-L.; Liu, Z.-Q.; Li, C.-F.; Zhu, Q.-S.; Zhang, H.; Suganuma, K. Bottom–Up Electrodeposition of Large-Scale Nanotwinned Copper within 3D Through Silicon Via. Materials 2018, 11, 319.

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