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Article

Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering

1
Research Institute, Kochi University of Technology, Kochi 782-8502, Japan
2
X-Ray Research Laboratory, Rigaku Corporation, Tokyo 196-8666, Japan
3
Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198, Japan
*
Author to whom correspondence should be addressed.
Materials 2017, 10(8), 916; https://doi.org/10.3390/ma10080916
Received: 19 May 2017 / Revised: 22 July 2017 / Accepted: 31 July 2017 / Published: 9 August 2017
(This article belongs to the Special Issue Advances in Transparent Conducting Materials)
We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used sintered AZO targets with an Al2O3 content of 2.0 wt. %. The analysis of the data obtained by X-ray diffraction, Hall-effect, and optical measurements of AZO films at various power ratios showed that the complex orientation texture depending on the growth process enhanced the contribution of grain boundary scattering to carrier transport and of carrier sinks on net carrier concentration, resulting in the reduction in the Hall mobility of polycrystalline AZO films. View Full-Text
Keywords: carrier transport; crystallographic orientation; initial growth stage; transparent conducting oxide; X-ray diffraction; Al-doped ZnO; magnetron sputtering carrier transport; crystallographic orientation; initial growth stage; transparent conducting oxide; X-ray diffraction; Al-doped ZnO; magnetron sputtering
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MDPI and ACS Style

Nomoto, J.; Inaba, K.; Kobayashi, S.; Watanabe, T.; Makino, H.; Yamamoto, T. Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering. Materials 2017, 10, 916. https://doi.org/10.3390/ma10080916

AMA Style

Nomoto J, Inaba K, Kobayashi S, Watanabe T, Makino H, Yamamoto T. Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering. Materials. 2017; 10(8):916. https://doi.org/10.3390/ma10080916

Chicago/Turabian Style

Nomoto, Junichi, Katsuhiko Inaba, Shintaro Kobayashi, Takeshi Watanabe, Hisao Makino, and Tetsuya Yamamoto. 2017. "Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering" Materials 10, no. 8: 916. https://doi.org/10.3390/ma10080916

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